Dynex Semiconductor has released a new compact IGBT module package designed for applications up to 3300V including traction auxiliaries and specialist motor drives

The new P package has a 6000V isolation rating and is based on an established industry footprint with baseplate dimensions of 140 ž 73mm. The new product group is particularly suitable for applications where small physical size is important. The first product available using the P outline is the Powerline 200A, 3300V IGBT module (the DIM200PHM33).

This article was originally published on Electronicstalk on 13 March 2001 at 8.00am (UK)
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This module is a half-bridge switch containing non-punch-through (NPT) DMOS IGBT die with full 10us short-circuit withstand capability.

The long-term reliability and enhanced thermal performance are achieved through the use of aluminium nitride substrates mounted on a metal matrix compound baseplate.

The same package with a 100A half-bridge is planned for release shortly.

In due course, the P outline will be applied across the IGBT Powerline variants as well as the fast-recovery diode variants at 3300V.