International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET

International Rectifier has introduced the world's first 1000V radiation-hardened (rad-hard) power mosfet. The IRHY7G30SE rad-hard power mosfet improves power management circuits and high-frequency switching systems in satellite communications systems by minimising component count. The new 1000V device is a major breakthrough, as the highest voltage-rated rad-hard mosfet previously available was a 600V device.

This article was originally published on Electronicstalk on 14 February 2001 at 8.00am (UK)
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As well as replacing less efficient bipolar transistors in high-voltage applications, the IRHY7G30SE enables designers to accommodate safe derating conditions without losing functionality in their designs.

Typical applications include travelling wave tube amplifiers used to amplify microwave signals in satellite communications systems.

The 1000V mosfet is an enhancement-mode N-channel device, made with IR's proprietary radiation-hardened gate- and field-oxidation process to achieve stringent single-event upset and total ionising dose hardness requirements.

The device is single event effect (SEE) hardened with linear energy transfer (LET) of 37MeV/(mg/cm2) and retains virtually identical electrical performance up to 100krad (Si) total dose.

The radiation hardness of the 1000V mosfet is far superior to that of bipolar transistors, which normally operate at low total dose levels and require significant derating for SEE.

The product is available now in standard JEDEC TO-205AF (TO-39), TO-254AA and TO-257AA packages and can also be supplied in customer-specified packages.