Intersil has launched its advanced new DenseTrench power MOSFET family of discrete power devices designed for higher-efficiency low-voltage power switching applications

Intersil has launched its advanced new DenseTrench power mosfet family of discrete power devices designed for higher-efficiency low-voltage power switching applications. The new UltraFET Trench devices feature extremely low conduction and switching losses to significantly extend battery life in notebook PCs, cellular telephones, PDAs and other portable information appliances.

This article was originally published on Electronicstalk on 5 January 2001 at 8.00am (UK)
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They also improve the overall efficiency of high frequency DC/DC convertors used to power the latest microprocessor systems in desktop PCs and servers.

The first UltraFET Trench devices from Intersil include a series of fast-switching 30V mosfets, part number ISL9N310A, available in DPak, D2Pak and TO220 packages.

The advanced DenseTrench process results in extremely low on-resistance per silicon area while maintaining fast switching and low gate charge.

For example, the 30V mosfetS feature on-resistances down to 0.007Ohm or less, with relatively high current capability up to 30A.

"Anyone who regularly operates a laptop computer or portable device recognises the need for increased battery life, and these new DenseTrench products are targeted at meeting this need by reducing power losses and increasing efficiency", says Krishna Kuchimanchi, product marketing manager at Intersil.

UltraFET Trench devices use trench technology that differs from the planar technology traditionally used in standard mosfet products and features more than twice the channel density of competitive trench designs.

According to Intersil, the higher the channel density, the lower the overall channel resistance of the device and the lower the power losses.